inchange semiconductor isc product specification isc silicon npn power transistors bdt81/83/85/87 description dc current gain -h fe = 40(min)@ i c = 5a collector-emitter sustaining voltage- : v ceo(sus) = 60v(min)- bdt81; 80v(min)- bdt83; 100v(min)- bdt85; 120v(min)- BDT87 complement to type bdt82/84/86/88 applications designed for use in audio output stages and general amplifer and switching applications absolute maximum ratings(t =25 a ) symbol parameter value unit bdt81 60 bdt83 80 bdt85 100 v cbo collector-base voltage BDT87 120 v bdt81 60 bdt83 80 bdt85 100 v ceo collector-emitter voltage BDT87 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 20 a i b b base current 4 a p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1 /w r th j-a thermal resistance,junction to ambient 70 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors bdt81/83/85/87 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdt81 60 bdt83 80 bdt85 100 v ceo(sus) collector-emitter sustaining voltage BDT87 i c = 30ma; i b = 0 120 v v ce (sat)-1 collector-emitter saturation voltage i c = 5a; i b = 0.5a b 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 7a; i b = 0.7a b 1.6 v v be (on) base-emitter on voltage i c = 5a ; v ce = 4v 1.5 v i ces collector cutoff current v ce = 0.8v cbomax ; v be = 0 1 ma i cbo collector cutoff current v cb = v cbomax ; i e = 0 0.2 ma i ebo emitter cutoff current v eb = 7v; i c = 0 0.1 ma h fe-1 dc current gain i c = 50ma ; v ce = 10v 40 h fe-2 dc current gain i c = 5a ; v ce = 4v 40 f t current-gain?bandwidth product i c = 0.5a ; v ce = 10v 10 mhz switching times t on turn-on time 1 s t off turn-off time i c = 7a; i b1 = -i b2 = 0.7a 2 s isc website www.iscsemi.cn
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